Passivation of GaAs using (Ga2O3)1 - x(Gd2O3)x, 0?x?1.0 films
Journal
Applied Physics Letters
Journal Volume
75
Journal Issue
8
Pages
1116-1118
Date Issued
1999
Author(s)
Abstract
The Ga2O3(Gd2O3) dielectric film was previously discovered to passivate the GaAs surface effectively. We have investigated the systematic dependence of the dielectric properties of (Ga2O3)1 - x(Gd2O3)x on the Gd (x) content. Our results show that pure Ga2O3 does not passivate GaAs. Films with x≥ 14% are electrically insulating with low leakage current and high electrical breakdown strength. Furthermore, a low interfacial density of states was attained in films with x ≥ 14%. The results show the important role of Gd2O3 in the (Ga2O3)1 - x(Gd2O3)x dielectric films for effective passivation of GaAs. © 1999 American Institute of Physics.
Type
journal article