Ga 2 O 3 (Gd 2 O 3 )/GaAs power MOSFETs
Journal
Electronics Letters
Journal Volume
35
Journal Issue
8
Pages
667-669
Date Issued
1999
Author(s)
Wang, Y.C.
Kuo, J.M.
Mannaerts, J.P.
Tsai, H.S.
Kwo, J.
Krajewski, J.J.
Chen, Y.K.
Cho, A.Y.
Abstract
The power performance of GaAs MOSFETs using Ga2O3(Gd2O3) as the gate dielectric is presented. The I-V characteristics of the power devices are virtually free of hysteresis, indicating low interface state density in the oxide/GaAs interface. When operated at 850 MHz cellular frequency and tuned for maximum output power, maximum power-added efficiencies of 45 and 56% were obtained under 3 and 5 V operation, respectively. An output power of 26.5 dBm was measured from a 1 µm × 2.4 mm device under 5 V operation. These results show that the developed GaAs MOSFETs are promising candidates for microwave power amplifiers.
SDGs
Type
journal article