Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy

Journal

Applied Physics Letters

Journal Volume

68

Journal Issue

8

Pages

1099-1101

Date Issued

1996

Author(s)

Passlack, M.

Mannaerts, J.P.

DOI

10.1063/1.115725

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443496

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000465918&doi=10.1063%2f1.115725&partnerID=40&md5=67800e1dbda348ec7eeb5929ea459414

Type

journal article