Observation of inversion layers at GA2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
Journal
Electronics Letters
Journal Volume
32
Journal Issue
3
Pages
267-269
Date Issued
1996
Author(s)
Abstract
Strong inversion has been observed at Ga2O3-GaAs interfaces fabricated using in-situ multiple-chamber molecular beam epitaxy. The oxide films were deposited on clean, atomically ordered (100) GaAs surfaces at ~600°C by electron beam evaporation using a Gd3Ga5O12 single crystal source. The formation of inversion layers in both n- and p-type GaAs has been clearly established by quasi-static capacitance-voltage measurements.
SDGs
Type
journal article