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College of Science / 理學院
Physics / 物理學系
Electron spin resonance study of the effect of applied stress during thermal oxidation of (111)Si on inherent Pb interface defects
Details
Electron spin resonance study of the effect of applied stress during thermal oxidation of (111)Si on inherent Pb interface defects
Journal
Microelectronic Engineering
Journal Volume
72
Pages
76-80
Date Issued
2004
Author(s)
Pierreux, D.
Stesmans, A.
Jaccodine, R. J.
MINN-TSONG LIN
Delph, T. J.
DOI
10.1016/j.mee.2003.12.019
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443539
Type
journal article