https://scholars.lib.ntu.edu.tw/handle/123456789/444850
標題: | Development of high-performance multicrystalline silicon for photovoltaic industry | 作者: | Yang, Y.M. Yu, A. Hsu, B. Hsu, W.C. Yang, A. Lan, C.-W. CHUNG-WEN LAN |
關鍵字: | Directional solidification; Grain growth; Multicrystalline silicon; Semiconducting silicon; Solar cells | 公開日期: | 2015 | 卷: | 23 | 期: | 3 | 起(迄)頁: | 340-351 | 來源出版物: | Progress in Photovoltaics: Research and Applications | 摘要: | The low cost and high quality of multicrystalline silicon (mc-Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc-Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity. With the breakthrough of crystal growth technology, the so-called high-performance mc-Si has increased about 1% in solar cell efficiency from 16.6% in 2011 to 17.6% in 2012 based on the whole ingot performance. In this paper, we report our development of this high-performance mc-Si. The key ideas behind this technology for defect control are discussed. With the high-performance mc-Si, we have achieved an average efficiency of near 17.8% and an open-circuit voltage (Voc) of 633mV in production. The distribution of cell efficiency was rather narrow, and low-efficiency cells (<17%) were also very few. The power of the 60-cell module using the high-efficiency cells could reach 261 W as well. Copyright © 2013 John Wiley & Sons, Ltd. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/444850 | DOI: | 10.1002/pip.2437 | SDG/關鍵字: | Costs; Efficiency; Grain boundaries; Grain growth; Open circuit voltage; Photovoltaic cells; Polysilicon; Silicon compounds; Silicon solar cells; Solar cells; Solidification; Average efficiencies; Cell efficiency; Crystal growth technology; High-efficiency cells; Multi-crystalline silicon; Multicrystalline silicon (mc-Si); Photovoltaic industry; Solar cell efficiencies; Semiconducting silicon |
顯示於: | 化學工程學系 |
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