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College of Engineering / 工學院
Chemical Engineering / 化學工程學系
Modulating dopant segregation in floating-zone silicon growth in magnetic fields using rotation
Details
Modulating dopant segregation in floating-zone silicon growth in magnetic fields using rotation
Journal
Journal of Crystal Growth
Journal Volume
180
Journal Issue
3-4
Pages
381-387
Date Issued
1997
Author(s)
Lan, C.W.
Liang, M.C.
CHUNG-WEN LAN
DOI
10.1016/S0022-0248(97)00264-9
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/444958
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031244748&doi=10.1016%2fS0022-0248%2897%2900264-9&partnerID=40&md5=e261eb8e0e273a6335018273d4e9d896
Type
journal article