Electronic and bonding structures of B-C-N thin films investigated by x-ray absorption and photoemission spectroscopy
Journal
Journal of Applied Physics
Journal Volume
96
Journal Issue
1
Pages
208-211
Date Issued
2004
Author(s)
Ray, S. C.
Tsai, H. M.
Bao, C. W.
Chiou, J. W.
Jan, J. C.
Kumar, K. P. K.
Pong, W. F.
Tsai, M. H.
Chattopadhyay, S.
Chen, L. C.
Chien, S. C.
Lee, M. T.
Lin, S. T.
Chen, K. H.
Abstract
X-ray absorption near-edge structure (XANES) and valence-band photoelectron spectroscopy (PES) were used to investigate the electronic and bonding structures of B-C-N thin films. The intensities of the sp2-bonded features in the C K-edge XANES spectra are found to generally decrease as the C concentration increases, whereas the intensities of the sp2-bonded features in the spectra of N K-edge XANES increase with the N concentration. The decrease of the intensities of the sp2-bonded features in the C and N K-edges XANES spectra correlates with the increase of the C/B and N/B concentration ratios and the increase of Young’s modulus. Valence-band PES spectra are found to be insensitive to the variations of the B and C concentrations in B-C-N compounds
SDGs
Type
journal article