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  4. Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor
 
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Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Journal
Diamond and Related Materials
Journal Volume
9
Journal Issue
3-6
Pages
556-561
Date Issued
2000
Author(s)
Wu, J. J.
Chen, K. H.
Wen, C. Y.
Chen, L. C.
Guo, X. J.
Lo, H. J.
Lin, S. T.
Yu, Y. C.
Wang, C. W.
CHENG-YEN WEN  
LI-CHYONG CHEN  
DOI
10.1016/S0925-9635(99)00218-6
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/445767
Abstract
The effect of carbon source on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. The growth characteristics of CH4, C2H2 and CH3NH2 were examined with and without H2 addition during growth. The results indicated that SiCN films were deposited successfully using CH4 with H2 addition as well as using CH3NH2 both with and without H2 addition. (Si; C) and N composition ratios of the films thus deposited were around 0.75. Carbon was hardly incorporated into the films when deposited using C2H2 as the source gas regardless of H2 addition during growth. Among the three source gas studied, CH3NH2 was the most effective for the SiCN films growth. Spectroscopic study of the gas phase species during growth and discussion on the growth phenomena are presented in this paper. (C) 2000 Elsevier Science S.A. All rights reserved. The effect of carbon source on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. The growth characteristics of CH4, C2H2 and CH3NH2 were examined with and without H2 addition during growth. The results indicated that SiCN films were deposited successfully using CH4 with H2 addition as well as using CH3NH2 both with and without H2 addition. (Si; C) and N composition ratios of the films thus deposited were around 0.75. Carbon was hardly incorporated into the films when deposited using C2H2 as the source gas regardless of H2 addition during growth. Among the three source gas studied, CH3NH2 was the most effective for the SiCN films growth. Spectroscopic study of the gas phase species during growth and discussion on the growth phenomena are presented in this paper.
SDGs

[SDGs]SDG6

Type
journal article

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