Parameter analysis of chemical mechanical polishing: An investigation based on the pattern planarization model
Journal
Journal of the Electrochemical Society
Journal Volume
146
Journal Issue
9
Pages
3420-3424
Date Issued
1999
Author(s)
Lee, B.-S.
Abstract
Based on the pattern planarization model, polishing time, polished thickness, and the planarization efficiency of a point of interest on a wafer during the chemical mechanical process are expressed as functions of polishing parameters. The influences as well as the variation of polishing time, polished thickness, and planarization efficiency across the wafer are also presented. The effects of polishing on the process are discussed and the predicted trends in adjusting these polishing parameters are illustrated. © 1999 The Electrochemical Society. All rights reserved.
Type
journal article