Simulation and characterization of a CMOS-MEMS gyroscope with parasitic-insensitive sensing
Journal
IEEE Workshop on Advanced Robotics and its Social Impacts
Date Issued
2008
Author(s)
Abstract
This paper reports the design and simulation results of the symmetrical and decoupled CMOS-MEMS gyroscope that utilizes the vertical capacitance change between the proof mass and sensing electrode. In order to reduce the lateral curling, a special beam with inversed-tapered cross-section has been designed. The gyroscope is fabricated through a standard 0.35 mum 2P4M CMOS-MEMS process. The dynamical response of the gyroscope is simulated using the MATLAB analytical simulator with a thermal noise of 0.0112 */s/Hz 1/2 and mechanical sensitivity of 0.4021 nm/deg/s at 50Hz bandwidth. In modal analysis, the modal frequency results using CoventorWare FEM simulator have 3% error compared to the formula calculation results. The on-chip parasitic-insensitive switched-capacitor sensing circuit is designed with a simulated sensitivity of 25.8938 V/pF. The sensitivity of the gyroscope is 9.16 mV/deg/s while the nonlinearity is 0.8937% at V Driving =10V.
Type
conference paper