A comparative molecular dynamics study of copper trench fill properties between Ta and Ti barrier layers

Journal

Materials Science in Semiconductor Processing

Journal Volume

8

Journal Issue

6

Pages

622-629

Date Issued

2005

Author(s)

Yang, J.Y.

Hong, R.T.

Huang, M.J.

DOI

10.1016/j.mssp.2006.02.001

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/447924

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-33646873094&doi=10.1016%2fj.mssp.2006.02.001&partnerID=40&md5=3cad168c0dfed1cbe69323b90fe352a1

Type

journal article