The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect
Journal
Vacuum
Journal Volume
140
Pages
63-65
Date Issued
2017
Author(s)
Liao, M.-H.
Huang, H.-Y.
Tsai, F.-A.
Chuang, C.-C.
Hsu, M.-H.
Lee, C.-C.
Lee, M.-H.
Lien, C.
Hsieh, C.-F.
Wu, T.-C.
Wu, H.-S.
Yao, C.-W.
Abstract
Super short channel control (sub-threshold swing = 95 mV/dec) in Ge n-type Fin Field-Effect Transistors (n-FinFETs) is achieved through the promising gate stack characteristics of gate leakage (Jg)-equivalent-oxide-thickness (EOT) and ultra-high k-value (∼312) with the implement of the magnetic gate stack scheme. On the other hand, the negative capacitance effect is also observed in the magnetic Ge n-FinFETs by the extraction of the body factor (m = 0.47) at low temperature measurement. The proposed magnetic gate stack scheme (tetragonal-phase BaTiO3 as the dielectric layer and magnetic FePt film as the metal gate) in the Ge n-FinFETs has super Jg-EOT characteristics, negative capacitance phenomenon, and promising transistor performance. It provides the useful solution for the future low power mobile devices designed on the high mobility (Ge) material.
SDGs
Type
journal article