Experimental demonstration for ultra-low on-resistance in raised source/drain In0.53Ga0.47As QW-MOSFETs with implant-free process
Journal
Journal of Physics D: Applied Physics
Journal Volume
46
Journal Issue
39
Date Issued
2013
Author(s)
Abstract
With the optimized raised source/drain (S/D) structure to avoid the current crowding effect and the heavily in situ Si-doped (1.5 × 1019 cm-3) in the S/D region with the implant-free process, we demonstrate the outstanding on-state performance and ultra-low S/D resistance (R SD) of 220 Ω μm in indium gallium arsenide (In 0.53Ga0.47As) quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs). A device with gate length (Lg) = 1 μm exhibits saturation drain current (ID,sat) = 3.1 × 10-4 A μm-1 and peak transconductance (gm) = 866 μS μm-1. The optimized raised S/D thickness to balance the trade-off between the current crowding effect and the intrinsic resistance increase is investigated. On the other hand, the implant-free and gate-last process with low thermal budget process also lead to high-quality high-κ gate stack and the possibility of integration. © 2013 IOP Publishing Ltd.
SDGs
Type
journal article