The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics
Journal
IEEE International Reliability Physics Symposium Proceedings
Pages
956-959
Date Issued
2009
Author(s)
Lee, M.H.
Chang, S.T.
Weng, S.-C.
Liu, W.-H.
Chen, K.-J.
Ho, K.-Y.
Liao, M.H.
Huang, J.-J.
Hu, G.-R.
Abstract
The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics. ©2009 IEEE.
Type
conference paper