Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors
Journal
Applied Physics Letters
Journal Volume
91
Journal Issue
10
Pages
102103
Date Issued
2007
Author(s)
Abstract
The dependence of electron mobility on strain, channel direction, and substrate orientation is theoretically studied for the germanium n -channel metal-oxide-semiconductor field-effect transistors. For the unstrained channel, (111) substrate can provide the highest mobility among the three orientations, mainly due to its largest quantization mass and smallest conductivity mass in L valley. The tensile strain parallel to the [1- 10] channel direction on (111) substrate gives 4.1 times mobility of Si at 1 MVcm, and the mobility enhancement starts to saturate for the strain larger than 0.5%. The compressive strain of ∼1.5% transverse to [1- 10] on (111) substrate yields 2.9 times mobility enhancement at 1 MVcm. © 2007 American Institute of Physics.
Other Subjects
Compressive stress; Crystal orientation; Field effect transistors; MOS devices; Tensile strain; Conductivity mass; Electron mobility enhancement; Quantization mass; Substrate orientation; Electron mobility
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
75.pdf
Size
283.57 KB
Format
Adobe PDF
Checksum
(MD5):833cb2ce3442424c4742d8feece2ed44