Recent progress in the development of a monolithic active pixel detector for a B factory
Journal
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
579
Journal Issue
2 SPEC. ISS.
Pages
680-684
Date Issued
2007
Author(s)
Stani?, S.
Abstract
Monolithic Active Pixel Sensors (MAPS) may become the building blocks of vertex detectors at future high luminosity e+ e- colliders. Requiring an active layer only a few tens of microns thick, MAPS can be thinned to ∼ 50 μ m, which reduces the multiple scattering of primary particles. Deep sub-micron CMOS processes allow for small pixel size, needed for adequate single point resolution and low occupancy at a Super B factory. Major concerns with MAPS are readout speed and signal stability for large pixel arrays. Laser bench test results of a full size prototype (CAP3) with 118,784 readout pixels and a 5-deep correlated double sampling pipeline are presented. Lessons learned are applied to a design iteration and investigation of two new digital readout sensor designs, all included in the CAP4 prototype chip. © 2007 Elsevier B.V. All rights reserved.
Subjects
B factory; CMOS; Monolithic active pixel sensor; Radiation hard; Vertex detector
SDGs
Other Subjects
Light scattering; Luminance; Monolithic integrated circuits; Radiation hardening; Active layer; Monolithic active pixel sensor; Monolithic Active Pixel Sensors; Sensor designs; Vertex detector; Sensors
Type
journal article