Terahertz field enhancement in doped semiconductor slot cavities
Journal
Journal of Applied Physics
Journal Volume
106
Journal Issue
12
Date Issued
2009
Author(s)
Abstract
A field enhancement mechanism, based on resonance in a metal-insulator-metal waveguide mode in a doped semiconductor slot cavity, is demonstrated at terahertz frequencies using a Drude model and numerical simulations. The influence of both geometry and material on the resonance properties is evaluated. Such field enhancement will aid in terahertz spectroscopy, and allow realization of terahertz resonant-gap chain and other waveguides that have been studied using metals at optical frequencies.
SDGs
Type
journal article