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College of Engineering / 工學院
Engineering Science and Ocean Engineering / 工程科學及海洋工程學系
XRD characterization for Al- and N-doped 3C-SiC on Si (100) substrate after pulsed excimer laser anneal
Details
XRD characterization for Al- and N-doped 3C-SiC on Si (100) substrate after pulsed excimer laser anneal
Journal
Materials Science Forum
Journal Volume
717-720
Pages
497-500
Date Issued
2012
Author(s)
Lee, K.-Y.
Huang, Y.-H.
Huang, C.-F.
Chung, C.Y.
Lin, S.C.
KUNG-YEN LEE
DOI
10.4028/www.scientific.net/MSF.717-720.497
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/451524
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84861416989&doi=10.4028%2fwww.scientific.net%2fMSF.717-720.497&partnerID=40&md5=77b89d76a5903fbcf916ff7e1f62aecc
Type
conference paper