Enhancement of thermoelectric figure of merit in β -Zn4Sb3 by indium doping control
Journal
Applied Physics Letters
Journal Volume
107
Journal Issue
123902
Pages
123902-1 - 123902-5
Date Issued
2015
Author(s)
Wei, P. C.
Yang, C. C.
Chen, J. L.
Sankar, R.
Chen, C. L.
Hsu, C. H.
Chang, C. C.
Chen, C. L.
Dong, C. L.
Chen, K. H.
Wu, M. K.
Chen, Y. Y.
Abstract
We demonstrate the control of phase composition in Bridgman-grown β-Zn4Sb3 crystals by indium doping, an effective way to overcome the difficulty of growing very pure β-Zn4Sb3 thermoelectric material. The crystal structures are characterized by Rietveld refinement with synchrotron X-ray diffraction data. The results show an anisotropic lattice expansion in In-doped β-Zn4Sb3 wherein the zinc atoms are partially substituted by indium ones at 36f site of R-3c symmetry. Through the elimination of ZnSb phase, all the three individual thermoelectric properties are simultaneously improved, i.e., increasing electrical conductivity and Seebeck coefficient while reducing thermal conductivity. Under an optimal In concentration (x = 0.05), pure phase β-Zn4Sb3 crystal can be obtained, which possesses a high figure of merit (ZT) of 1.4 at 700 K.
SDGs
Publisher
American Institute of Physics Inc.
Type
journal article