High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)
Journal
Applied Physics Letters
Journal Volume
87
Journal Issue
25
Pages
1687,2
Date Issued
2005
Author(s)
Hong, M.
Kortan, A.R.
Chang, P.
Huang, Y.L.
Chen, C.P.
Chou, H.Y.
Lee, H.Y.
Kwo, J.
Chen, C.H.
Goncharova, L.V.
Garfunkel, E.
Gustafsson, T.
Abstract
High-quality single-crystal Sc2O3 films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a Sc2O3 target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of 0.06nm. The films are well aligned with the Si substrate with an orientation relationship of Si(111)‖Sc2O3(111), and an in-plane expitaxy of Si[1¯10]‖Sc2O3[1¯01].
SDGs
Type
journal article