A micromechanical high-Q elliptic disk displacement amplifier
Journal
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Journal Volume
2016-February
Pages
663-666
Date Issued
2016
Author(s)
Abstract
An 89-MHz micromechanical elliptic-disk displacement amplifying resonant switch ("resoswitch") (cf. Fig. 1(c)) with a displacement gain of 2.04 has achieved a Q of 101,600-more than 9× higher than that of previous array-based (Fig. 1(a) [1]) and slotted-disk (Fig. 1(b) [2] [3]) approaches. Key to this demonstration are: 1) gain-inducing axial stiffness differences derived from ellipse geometry rather than previous Q-degrading slots; and 2) an elliptic resonance strain field that better negates energy loss at a center anchor, allowing for Q's even higher than circular disks. This ability to affect displacement amplification while maintaining Q >100,000 should provide more than 10-dB sensitivity improvement for recent resoswitch-based zero-quiescent radio receivers [4].
SDGs
Type
conference paper