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College of Engineering / 工學院
Applied Mechanics / 應用力學研究所
Effects of drain-bias and ambient on hump formation in the transfer curves of positively gate-biased MgZnO thin film transistors
Details
Effects of drain-bias and ambient on hump formation in the transfer curves of positively gate-biased MgZnO thin film transistors
Journal
Thin Solid Films
Journal Volume
529
Pages
360-363
Date Issued
2013
Author(s)
Tsai, Y.-S.
Li, C.-H.
Chiu, I.-C.
Chin, H.-A.
I-CHUN CHENG
JIAN-ZHANG CHEN
DOI
10.1016/j.tsf.2012.06.028
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/486643
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84873733535&doi=10.1016%2fj.tsf.2012.06.028&partnerID=40&md5=1d379020791d1460e1c1db5af029895a
Type
conference paper