A wideband electrostatic microwave switch fabricated by surface micromachining
Journal
Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Journal Volume
23
Journal Issue
6
Pages
781-787
Date Issued
2000
Author(s)
Abstract
Abstract An electrostatic microwave switch has been implemented by applying surface micromachining processes. The substrate of the microwave switch is gallium arsenide (GaAs). The structure of the microwave switch contains a gold coplanar waveguide and a suspended aluminum membrane. The Al membrane is directly anchored to the sidewalls of the GaAs substrate. All processing temperatures are under 350°C. The microwave switch operation is controlled by electrostatic force. The experimental results of the microwave switch show a microwave isolation of ‐40 dB and an insertion loss of ‐0.5 dB in the range of 0.1 to 7 GHz. In addition to demonstrating the design and fabrication of the microwave switch, this work summarizes experimental results.
SDGs
Type
journal article