Ga0.51In0.49P/lnxGa1-xAs/GaA s lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
Journal
Journal of Applied Physics
Journal Volume
85
Journal Issue
4
Pages
2197-2201
Date Issued
1999
Author(s)
Abstract
Recently, it was demonstrated that doped-channel field-effect-transistor (DCFET) structure has the advantages of high breakdown voltage, high current drivability, and high turn on voltage. Therefore, a series of lattice-matched and strained Ga0.51In0.49P/InxGa1-xAs/GaAs (0≤x≤0.22) DCFETs were studied in order to find the optimized structure. Through dc and microwave measurements, we observed that the introduction of a 150-Å-thick strained InxGa1-xAs (0.15≤x≤0.22) channel can enhance device performance, compared to the lattice-matched one (x = 0). The optimized performance of transconductance (gm), current-gain cutoff frequency (ft) and maximum oscillation frequency (fmax) all occurred when indium content x was between 0.15 and 0.20 for devices with 1-μm-long gate and these optimized results are comparable to those state-of-the-art results of pseudomorphic high electron mobility transistors. We also found that DCFETs are very ideal for single-voltage-supply operation. Degradation of device performance was observed for larger indium content (x = 0.22), which is associated with strain relaxation in this highly strained channel. Experimental results showed that Ga0.51In0.49P/Inx.Ga1-xAs/GaAs DCFETs with indium content x between 0.15 and 0.20 were very suitable for microwave high power device applications. © 1999 American Institute of Physics.
SDGs
Type
journal article