https://scholars.lib.ntu.edu.tw/handle/123456789/486862| Title: | Ga<inf>0.51</inf>In<inf>0.49</inf>P/ln<inf>x</inf>Ga<inf>1-x</inf>As/GaA s lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy | Authors: | Lin, Y.-S. Lu, S.-S. Chang, P.-Z. PEI-ZEN CHANG |
Issue Date: | 1999 | Journal Volume: | 85 | Journal Issue: | 4 | Start page/Pages: | 2197-2201 | Source: | Journal of Applied Physics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/486862 | DOI: | 10.1063/1.369527 |
| Appears in Collections: | 應用力學研究所 |
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