Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires
Journal
Nano Letters
Journal Volume
15
Journal Issue
3
Pages
1654-1659
Date Issued
2015
Author(s)
Abstract
The formation of abrupt Si/Ge heterointerfaces in nanowires presents useful possibilities for bandgap engineering. We grow Si nanowires containing thick Ge layers and sub-1 nm thick Ge "quantum wells" and measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial compressive strains of several percent, while stress at the Si/Ge interface causes lattice rotation. High strains can be achieved in these heterostructures, but we show that they are unstable to interdiffusion.
Type
journal article