Switching by topological insulators

Journal
Nature Materials
Journal Volume
17
Journal Issue
9
Pages
755-757
Date Issued
2018
Author(s)
DOI
URI
URL
Abstract
Magnetization in magnetoresistive memory devices can be controlled at room temperature by spin–orbit torques originating from the surface states of topological insulators.
SDGs

[SDGs]SDG7

Type
journal article

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