https://scholars.lib.ntu.edu.tw/handle/123456789/491152
標題: | Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell | 作者: | Rahaman, S.Z. Wang, I.-J. Chen, T.-Y. CHI-FENG PAI Wang, D.-Y. Wei, J.-H. Lee, H.-H. Hsin, Y.-C. Chang, Y.-J. Yang, S.-Y. Kuo, Y.-C. Su, Y.-H. Chen, Y.-S. Huang, K.-C. CHIH-I WU |
關鍵字: | MRAM; Nonvolatile memory; SOT-MRAM; spin-Hall effect; spin-orbit torque; spintronics; STT-MRAM | 公開日期: | 2018 | 卷: | 39 | 期: | 9 | 起(迄)頁: | 1306-1309 | 來源出版物: | IEEE Electron Device Letters | 摘要: | In this letter, we present a novel step spin-orbit torque magnetic random access memory (SOT-MRAM) cell structure and its switching behavior. A special stop-on-MgO etch etches away the hard mask and the pinned layer while retaining the free layer (FL) and MgO as part of the cell. The extended Ta/CoFeB/MgO layer is proved to be more tolerant to the etching non-uniformity of the Ta nanowire and improve etching yield. Although etching stops on MgO, the FL underneath the thin MgO has been rendered non-magnetic by the etching process. Recessed Cu pads were added to the Ta nanowire, which substantially reduces the overall resistance of the Ta nanowire. The general switching behavior of the step SOT-MRAM cells, such as pulse-width and temperature dependence of the switching currents, resembles that of a spin-Transfer torque MRAM cell. © 1980-2012 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/491152 | ISSN: | 07413106 | DOI: | 10.1109/LED.2018.2856518 | SDG/關鍵字: | Cells; Current density; Cytology; Electric resistance; Etching; Magnesia; Magnetic recording; Magnetic storage; Nanowires; Random access storage; Spin Hall effect; Spintronics; Switches; Switching; Tantalum; Tantalum compounds; Temperature; Temperature distribution; Thermodynamic stability; Torque; Magnetic tunneling; MRAM; Non-volatile memory; SOT-MRAM; Spin orbits; STT-MRAM; MRAM devices |
顯示於: | 材料科學與工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。