Rapidly selective growth of nanoparticles by electron-beam and optical lithographies with chemically amplified resists
Journal
Electrochemical and Solid-State Letters
Journal Volume
8
Journal Issue
2
Date Issued
2005
Author(s)
Abstract
Rapidly and precisely selective growth of self-assembled nanoparticles using an electron-beam or optical exposure system with commercial chemically amplified resists was demonstrated. The required exposure dosage was less than for patterning chemically amplified resists. By immersing the patterned resist sample in the nanoparticle colloidal solution, nanoparticles were selectively self-assembled on the (3-aminopropyl)trimethoxysilane layer, which was partially covered by the patterned resist layer. The selective growth area can be performed from several hundred micrometers to sub-50 nm. This method has great potential to be used for rapidly selective growth of various nanoparticles or nanomaterials. © 2004 The Electrochemical Society. All rights reserved.
Type
journal article