Gaas-Gaalas Distributed-Feedback Diode Lasers with Separate Optical and Carrier Confinement

Journal
Applied Physics Letters
Journal Volume
27
Journal Issue
3
Pages
145-146
Date Issued
1975
Author(s)
Aiki, K.
Nakamura, M.
Umeda, J.
Yariv, A.
Katzir, A.
Yen, Hw
DOI
URI
Abstract
Remarkable reduction of the threshold current density is achieved in GaAs-GaAlAs distributed-feedback diode lasers by adopting a separate-confinement heterostructure. The diodes are lased successfully at temperatures up to 340 °K under pulsed operation. The lowest threshold current density is 3 kA/cm2 at 300 °K.
SDGs

[SDGs]SDG7

Type
journal article

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