Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance lrOx/GdOx/W cross-point memories
Journal
Nanoscale Research Letters
Journal Volume
9
Journal Issue
1
Pages
1-8
Date Issued
2014
Author(s)
Abstract
Enhanced resistive switching phenomena of IrOx/GdOx/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd2O3 films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of -6.4 V and high operation current of >1 mA, while the cross-point memory device shows also bipolar resistive switching with low-voltage format of +2 V and self-compliance operation current of 10,000 in every cycle, and good data retention of >104 s. This memory device has great potential for future nanoscale high-density non-volatile memory applications.
Type
journal article