Structural and photoluminescence properties of ZnO films grown on 6H-SiC substrates by low-temperature atomic layer deposition
Journal
Journal of the Electrochemical Society
Journal Volume
158
Journal Issue
12
Date Issued
2011
Author(s)
Abstract
We have applied atomic layer deposition (ALD) technique to grow high-quality ZnO films on 6H-SiC substrates at low temperature. The columnar growth with c axis normal to the substrate surface occurred in the ZnO films grown at temperatures above 270�XC. The crystalline quality was improved by post-deposition annealing at 650�XC. However, no preferred orientation growth was observed in the ZnO films deposited at a low temperature of 180�XC, even after the post-annealing treatment. A two-step approach was developed to prepare high-quality and highly orientated ZnO films at a low deposition temperature of 180�XC, by introducing ZnO buffer layer grown at a high temperature of 300�XC. Optically pumped stimulated emission in the ZnO films with a high threshold intensity of 750 kW/cm2 was observed at room temperature, indicating that both the carrier and optical confinement are important to achieve the low-threshold stimulated emission in ZnO films.
SDGs
Type
journal article