Physical and memory characteristics of atomic-layer-deposited high-�e hafnium-aluminum-oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

Journal

Japanese Journal of Applied Physics

Journal Volume

48

Journal Issue

5 PART 2

Date Issued

2009

Author(s)

Das, A.

Maikap, S.

Li, W.-C.

Chang, L.-B.

Yang, J.-R.

DOI

10.1143/JJAP.48.05DF02

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/491611

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-70249142512&doi=10.1143%2fJJAP.48.05DF02&partnerID=40&md5=83f4c9363b7d18319c8176b67b56ff84

Type

journal article