Low voltage operation of high-�e HfO2/TiO 2/Al2O3 single quantum well for nanoscale flash memory device applications
Journal
Japanese Journal of Applied Physics
Journal Volume
47
Journal Issue
3 PART 1
Pages
1818-1821
Date Issued
2008
Author(s)
Maikap, S.
Wang, T.-Y.
Tzeng, P.-J.
Lee, H.-Y.
Lin, C.-H.
Wang, C.-C.
Lee, L.-S.
Yang, J.-R.
Tsai, M.-J.
Type
journal article