Low voltage operation of high-�e HfO2/TiO 2/Al2O3 single quantum well for nanoscale flash memory device applications
Journal
Japanese Journal of Applied Physics
Journal Volume
47
Journal Issue
3 PART 1
Pages
1818-1821
Date Issued
2008
Author(s)
Maikap, S.
Wang, T.-Y.
Tzeng, P.-J.
Lee, H.-Y.
Lin, C.-H.
Wang, C.-C.
Lee, L.-S.
Yang, J.-R.
Tsai, M.-J.
Abstract
Memory characteristics of the high-κ HfO2/TiO2/Al2O3 single quantum well in a p-Si/Al2O3/HfO2/TiO2/Al2O3/platinum capacitor structure have been investigated. All high-κ films have been deposited by atomic layer deposition. A significant memory window of ∼1.6 V at a low gate voltage operation of 2 V, a high charge storage density of ∼3.6×1012/cm2, a moderate leakage current density of 1×10-6/cm2 at a gate voltage of -2 V, and a negligible charge loss of <5% up to 104 s of retention for the high-κ HfO2/TiO2/Al2O3 single quantum well memory capacitor have been observed as compared with those of pure HfO2, pure TiO2, and pure Al2O3 charge trapping layers. Excellent memory characteristics of the high-κ HfO2/TiO2/Al2O3 single quantum well device are obtained due to charge storage in the quantum well. The high-κ HfO2/TiO2/Al2O3 quantum well device with a low gate voltage operation of <2 V can be used in future nanoscale flash memory device applications.
SDGs
Type
journal article