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College of Engineering / 工學院
Materials Science and Engineering / 材料科學與工程學系
Memory characteristics of atomic-layer-deposited high- �e HfAlO nanocrystal capacitors
Details
Memory characteristics of atomic-layer-deposited high- �e HfAlO nanocrystal capacitors
Journal
Electrochemical and Solid-State Letters
Journal Volume
11
Journal Issue
4
Date Issued
2008
Author(s)
Maikap, S.
Tzeng, P.-J.
Wang, T.-Y.
Lin, C.H.
Lee, L.S.
Yang, J.-R.
Tsai, M.-J.
JER-REN YANG
DOI
10.1149/1.2839762
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/491622
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-39349093151&doi=10.1149%2f1.2839762&partnerID=40&md5=a089c4124dbe8f3faab7415b9923adcc
SDGs
[SDGs]SDG7
Type
journal article