HfO2/HfAlO/HfO2 nanolaminate charge trapping layers for high-performance nonvolatile memory device applications
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
46
Journal Issue
4 A
Pages
1803-1807
Date Issued
2007
Author(s)
Maikap, S.
Tzeng, P.-J.
Wang, T.-Y.
Lee, H.-Y.
Lin, C.-H.
Wang, C.-C.
Lee, L.-S.
Yang, J.-R.
Tsai, M.-J.
Abstract
A high-κ HfO2/HfAlO/HfO2 nanolaminate charge trapping layer in a p-Si/SiO2/[HfO2/HfAlO/HfO2 nanolaminate]/Al2O3/ platinum memory capacitor has been investigated. High-κ HfO2, Al2O3, and HfO2/HfAlO/HfO2 nanolaminate charge trapping layers are deposited by atomic layer deposition. Well-behaved counter clockwise capacitance-voltage hysteresis characteristics are observed for all memory capacitors. A large memory window of ∼10 V, a very low leakage current density of ∼5 × 10-9 A/cm2 at a gate voltage of -5 V, a high charge trapping density of ∼1.6 × 1013/cm 2, and a low charge loss of ∼20% after 10 years of retention for the HfO2/HfAlO/HfO2 nanolaminate charge trapping layer are observed as compared with those of pure HfO2 and pure Al 2O3 charge trapping layers. Excellent memory characteristics of HfO2/HfAlO/HfO2 nanolaminate layers are obtained owing to the layer-by-layer charge storage. High-κ HfO 2/HfAlO/HfO2 nanolaminate charge trapping layers can be used in future nanoscaled high-performance nonvolatile memory device applications. ©2007 The Japan Society of Applied Physics.
SDGs
Type
journal article