Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Journal

Applied Surface Science

Journal Volume

324

Pages

662-668

Date Issued

2015

Author(s)

Huang, J.-J.

Tsai, Y.-J.

Tsai, M.-C.

Huang, L.-T.

Lee, M.-H.

Chen, M.-J.

DOI

10.1016/j.apsusc.2014.11.009

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/491750

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84920690454&doi=10.1016%2fj.apsusc.2014.11.009&partnerID=40&md5=b720bb193d5646c2062a9a7f5d539c63

Type

journal article