Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Journal

Journal of Materials Chemistry C

Journal Volume

1

Journal Issue

45

Pages

7593-7597

Date Issued

2013

Author(s)

Huang, T.-H.

Yang, P.-K.

Chang, W.-Y.

Chien, J.-F.

Kang, C.-F.

Chen, M.-J.

He, J.-H.

DOI

10.1039/c3tc31542h

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/491760

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84887094470&doi=10.1039%2fc3tc31542h&partnerID=40&md5=0f0b54215a4324521ecdfa9aec089bef

Type

journal article