Ultraviolet electroluminescence from nitrogen-doped zno-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique
Journal
ACS Applied Materials and Interfaces
Journal Volume
5
Journal Issue
2
Pages
227-232
Date Issued
2013
Author(s)
Abstract
Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.
Type
journal article