P-type ZnO:P films fabricated by atomic layer deposition and thermal processing
Journal
Journal of the Electrochemical Society
Journal Volume
158
Journal Issue
5
Date Issued
2011
Author(s)
Abstract
P-type phosphorus-doped ZnO (ZnO:P) films were fabricated by atomic layer deposition of ZnO upon the amorphous silica substrates, which were prepared by coating the spin-on dopant consisted of P2O5 and SiO2 on silicon wafers. Post-deposition thermal treatments were carried out to diffuse the phosphorus dopants into ZnO and to activate the phosphorus-related acceptor states. The ZnO:P films exhibited p-type conductivity with an average hole concentration of 1.05 × 1017 cm−3. Significant spectral peaks associated with the acceptor states appeared in the low-temperature photoluminescence spectra of the p-type ZnO:P films. Optically-pumped stimulated emission around 393 nm was observed at room temperature, thereby indicating a good optical quality of the p-type ZnO:P film.
SDGs
Type
journal article