The FMR behavior of an ultrathin single Fe layer on a GaAs substrate
Journal
IEEE Transactions on Magnetics
Journal Volume
38
Journal Issue
5 I
Pages
3117-3119
Date Issued
2002
Author(s)
Yu, C.C.
Liou, Y.
Tsai, C.S.
Chen, M.J.
Chiu, B.S.
Hung, D.S.
Chang, J.F.
Lee, S.F.
Yao, Y.D.
Abstract
Single-layer Fe films 800 Å thick, with and without a 10-Å-thick Ag buffer layer, were prepared at various growth temperature, Tg, on GaAs(001) substrates by molecular-beam epitaxy. For Tg around 200 °C, high-quality single crystal films were obtained without the Ag buffer layer. For Tg ≦ 100 °C, a defect structure was observed in the iron layer. However, the addition of an ultrathin Ag buffer layer between GaAs and Fe has the desirable effects of eliminating the defect structure and significantly enhancing the FMR absorption.
Subjects
FMR absorption; MBE; Surface defects; Tunable microwave band-stop filter; Ultrathin iron-silver film
Other Subjects
Absorption; Ferromagnetic resonance; Gallium compounds; Iron; Magnetic filters; Molecular beam epitaxy; Single crystals; Ultrathin films; Tunable microwave band-stop filters; Magnetic thin films
Type
journal article