Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes
Journal
Applied Physics Letters
Journal Volume
76
Journal Issue
12
Pages
1516-1518
Date Issued
2000
Author(s)
Abstract
An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.
SDGs
Type
journal article