Low temperature direct electroless nickel plating on silicon wafer
Journal
Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Journal Volume
32
Journal Issue
1
Pages
137-140
Date Issued
2009
Author(s)
Abstract
Abstract In the study of electroless nickel (EN) plating on n‐type (100) silicon wafers, a relatively low‐temperature alkaline plating process is developed. Further experiments show that simple ethanol pretreatment of the substrate is practicable for obtaining an EN layer with a good adhesion strength of about 9.8 to 14.7 MPa. Both sodium tungstate and sodium fluoride can be used to decrease the threshold plating temperature from near 80°C to 65°C. The phosphorous content of the as‐plated layer is slightly higher than 7 wt.%.
Type
journal article