Surface Raman scattering study on the hydrogenated semiconductor surfaces: vibrational dephasing dynamics
Journal
Surface Science
Journal Volume
427-428
Pages
318-323
Date Issued
1999
Author(s)
Abstract
Surface Raman scattering has been systematically performed on Ge(100)-2 × 1:H and Ge(111)-1 × 1:H. The temperature-dependent spectral profiles of GeH stretches from 150 to 450 K were analyzed with the Persson-Ryberg dephasing model. The extracted exchange mode for the Ge(100) surface matches the GeH bending mode. However, the corresponding mode for the Ge(111) surface is within the phonon branch. The surface-specific vibrational dephasing behavior can be attributed to the difference in vibrational coupling between the adsorbates and the substrate. This behavior and the similar behavior found for the hydrogenated diamond and silicon surfaces can be explained by a multi-mode dephasing model.
Publisher
Elsevier Science B.V., Amsterdam
Type
journal article