Low alkaline contamination bottom antireflective coatings for both 193- and 157-nm lithography applications
Journal
Microelectronic Engineering
Journal Volume
67-68
Pages
312-318
Date Issued
2003
Author(s)
Abstract
A bilayer bottom antireflective coating (BARC) structure composed of TEOS oxide and silicon nitride film stacks is demonstrated for both ArF (193 nm) and F2 (157 nm) excimer laser lithography. The top TEOS oxide film is an NH3-contaminant-free material that can be used as an NH3 capping layer. After an oxygen plasma treatment, the bilayer structure is shown to have high thermal stability by thermal desorption spectrometry (TDS). The measured swing effect is significantly reduced by adding the bilayer BARC structure. This BARC structure could also reduce the reflectance of various highly reflective substrates to less than 2% for both 193 and 157 nm. © 2003 Elsevier Science B.V. All rights reserved.
SDGs
Type
conference paper