W-band monolithic pseudomorphic AIGaAs/InGaAs/GaAs HEMT CBCPW LNA
Journal
Electronics Letters
Journal Volume
29
Journal Issue
20
Pages
1804-1805
Date Issued
1993
Author(s)
Abstract
We have developed a W-band monolithic two-stage conductor-backed coplanar waveguide (CBCPW) low-noise amplifier using pseudomorphic AlGaAs/InGaAs/GaAs HEMT devices. The amplifier exhibits a noise figure of 4.2–4.8 dB with an associated gain of 12 dB from 92 to 96 GHz. The circuit was tested using a W-band on-wafer noise figure measurement system. The result is encouraging and shows promise for future MMIC implementation using the CBCPW structure.
Type
journal article