High-Performance W-Band Monolithic Pseudomorphic InGaAs HEMT LNA’s and Design/Analysis Methodology
Journal
IEEE Transactions on Microwave Theory and Techniques
Journal Volume
40
Journal Issue
3
Pages
417-428
Date Issued
1992
Author(s)
Wang, H.
Dow, G.S.
Allen, B.R.
Ton, T.-N.
Tan, K.L.
Chang, K.W.
Chen, T.-H.
Berenz, J.
Lin, T.S.
Liu, P.-H.
Streit, D.C.
Bui, S.B.
Raggio, J.J.
Chow, P.D.
Abstract
High-performance W-band monolithic one- and two-stage low noise amplifiers (LNAs) based on pseudomorphic InGaAs-GaAs HEMT devices have been developed. The one-stage amplifier has a measured noise figure of 5.1 dB with an associated gain of 7 dB from 92 to 95 GHz, and the two-stage amplifier has a measured small signal gain of 13.3 dB at 94 GHz and 17 dB at 89 GHz with a noise figure of 5.5 dB from 91 to 95 GHz. An eight-stage LNA built by cascading four of these monolithic two-stage LNA chips demonstrates 49 dB gain and 6.5 dB noise figure at 94 GHz. A rigorous analysis procedure was incorporated in the design, including accurate active device modeling and full-wave EM analysis of passive structures. The first pass success of these LNA chip designs indicates the importance of a rigorous design/analysis methodology in millimeter-wave monolithic IC development.>
Type
journal article