https://scholars.lib.ntu.edu.tw/handle/123456789/497374
標題: | 110-120-GHz Monolithic Low-Noise Amplifiers | 作者: | Ton, T.-N. Tan, K.L. Garske, D.C. Dow, G.S. Berenz, J. Pospieszalski, M.W. Pan, S.-K. HUEI WANG |
公開日期: | 1993 | 卷: | 28 | 期: | 10 | 起(迄)頁: | 988-993 | 來源出版物: | IEEE Journal of Solid-State Circuits | 摘要: | This paper presents the development of 110-120-GHz monolithic low-noise amplifiers (LNA’s) using 0.1μm pseudomorphic AlGaAs/InGaAs/GaAs low-noise HEMT technology. Two 2-stage LNA’s have been designed, fabricated, and tested. The first amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low-noise figure. The other amplifier has a measured small-signal gain of 19.6 dB at 110 GHz with a noise figure of 3.9 dB. A noise figure of 3.4 dB with 15.6-dB associated gain was obtained at 113 GHz. The small-signal gain and noise figure performance for the second LNA are the best results ever achieved for a two-stage HEMT amplifier at this frequency band. To our knowledge, this is the first report of monolithic amplifiers operating above 100 GHz using three-terminal devices. © 1993 IEEE |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0027677495&doi=10.1109%2f4.237511&partnerID=40&md5=5bc1af3e2fbe6e31e036131713b7b960 | DOI: | 10.1109/4.237511 | SDG/關鍵字: | Gain control; High electron mobility transistors; Hybrid integrated circuits; Monolithic integrated circuits; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Signal to noise ratio; Monolithic low noise amplifiers; Pseuodomorphic high electron mobility transistors; Three terminal devices; Amplifiers (electronic) |
顯示於: | 電機工程學系 |
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