A W-Band Monolithic, Singly Balanced Resistive Mixer With Low Conversion Loss
Journal
IEEE Microwave and Guided Wave Letters
Journal Volume
4
Journal Issue
9
Pages
301-302
Date Issued
1994
Author(s)
Abstract
We report the design, measured and simulated performance of a novel W-band monolithic, singly balanced resistive FET mixer utilizing 0.1-μm pseudomorphic AlGaAs/InGaAs on GaAs HEMT technology. At an LO drive of +8 dBm, this mixer has exhibited a minimum measured conversion loss of 12.8 dB, nearly a 10 dB improvement over previously reported data in this frequency range. Furthermore, the mixer figure of merit, defined as PIABa n — PLO, is at least +2 dBm, which is nominally 6 dBm better than that of comparable diode mixers at W-band. These results indicate the excellent potential of this mixer for integration with other circuit components in fully monolithic subsystems. © 1994 IEEE
Type
journal article