A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier
Journal
GaAs IC Symposium Technical Digest 1992
Pages
71-74
Date Issued
1992
Author(s)
Chen, T.H.
Tan, K.L.
Dow, G.S.
Wang, H.
Chang, K.W.
Ton, T.N.
Allen, B.
Berenz, J.
Liu, P.H.
Streit, D.
Hayashibara, G.
Abstract
The authors have designed and fabricated monolithic power amplifiers using pseudomorphic InGaAs power HEMTs (high-electron-mobility transistors) with record power and gain performance at W-band frequency. The two-stage amplifier has a small-signal gain of 9 dB and can deliver 0.1-W output power with 5.9-dB associated gain and 6.6% power-added efficiency at 93.5 GHz. The successful first pass design of the W-band MMIC (monolithic microwave integrated circuit) power amplifier is due to the superior device performance and the millimeter-wave monolithic power amplifier design techniques.>
SDGs
Type
conference paper